• Gallium Nitride Manufacturers
• Gallium Nitride Fet
• Gan Fets
• Gallium Nitride Fetal Alcohol Syndrome
• Gan Power Fet

Gallium Nitride is a wide band-gap semiconductor material, which can be used to make semiconductor devices such as diodes and transistors.

Gallium Nitride (GaN) Power FETs Gallium Nitride (GaN) is a hard and stable substance that is revolutionizing semiconductors for military communications, radar, and electronic warfare. SSDI specializes in offering fully screened GaN products in hermetically sealed packaging. Contact the factory to inquire about modifications or other requirements. Gallium Nitride FET Model. V V Orlov, G I Zebrev. National Research Nuclear Un iversity MEPHI, Moscow, Ru ssia. E-mail: gizebrev@mephi.ru. Gallium Nitride Power FET for the Ku-band. The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

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Mar 11, 2020

One of the most common transistors in switching power supplies is a metal–oxide–semiconductor field-effect transistor (MOSFET). While popular, MOSFETs experience losses in the silicon when operating at high switching frequencies. Power designers have begun to turn to GaN as it has become increasingly difficult to increase performance as MOSFETs near their physical limits.
Gallium Nitride (GaN) is a wide band-gap (WBG) semiconductor material, and like silicon, GaN can be used to make semiconductor devices such as diodes and transistors.
A power supply designer would choose a GaN transistor instead of silicon if they were targeting a small form factor and high efficiency. The losses in a silicon MOSFET make their use undesirable due to thermal management requirements, compared to a GaN transistor, which would dissipate less power and more efficiently conduct heat away.
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The development of GaN transistors has been of particular interest to the power electronics industry. As a transistor, GaN shows significant advantages over silicon in critical areas that allow power supply manufacturers to significantly increase efficiency, while at the same time decreasing the size and weight of their devices.
How Does GaN Improve Efficiency?
Power transistors are one of the primary contributors to power loss in a switching power supply. Losses in the transistors are generally separated into two categories: conduction and switching. Conduction losses are those caused by current flow when the transistor is on, and switching losses occur in the transition between on and off states.
When on, GaN transistors (like those made of silicon) resemble a resistance between drain and source, often referred to as Ron, and the conduction losses are proportional to this resistance. A key benefit of GaN and other WBG materials is their relationship between breakdown voltage and Ron. Figure 1 shows the theoretical limits of this relationship for silicon, GaN, and silicon carbide (SiC), another WBG material. It can be seen that for a given breakdown voltage, the Ron of the WBG devices is much lower than that of silicon, with GaN being the lowest of the three. As silicon is nearing its theoretical limit, the use of GaN and other WBG materials becomes necessary if improvements to Ron are to continue.
In addition to improvements in conduction losses, the use of GaN also leads to a reduction in switching losses. Multiple factors contribute to switching losses, several of which are improved through the use of GaN. One loss mechanism results from the fact that the current in a FET begins to flow before the drain-source voltage begins to fall, as shown in Figure 2. During this time, the losses (equal to the volt-amp product) are very large. Increasing the speed at which the switch turns on will reduce the losses incurred during this transition. Because GaN transistors can turn on faster than silicon FETs, they are able to reduce the losses caused by this transition.
Another way that GaN reduces switching loss is through the absence of a body diode. To avoid a short circuit condition, a period of time exists when both switches of a half-bridge are off. This is known as the “dead-time.” During this period, current continues to flow, but because both switches are off, it is forced through the body diode. The body diode is much less efficient than the Ron resistance of a Si-MOSFET when it is on. For a GaN transistor, there is no body diode. Current that would flow through the body diode of Si FET instead flows through the Ron resistance. This significantly reduces the losses incurred during the dead-time.
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Because the body diode of a silicon transistor conducts during the dead-time, it must be turned off when the other switch turns on. During this time, current flows in the reverse direction as the diode turns off, causing additional losses. In a GaN transistor, the absence of a body diode results in near-zero reverse recovery losses.
How Does GaN Decrease Form Factor?
While switching losses occur in short periods within the switching period, it is useful to look at them averaged over time. While the losses during a single switching transition may be significant, if the time period between switches is large (meaning a low switching frequency), the average value can be kept at a safe level. Because the switching losses are lower in GaN, the time between switches can be reduced, increasing the switching frequency. The increased switching frequency allows the size of many large components (such as the transformer, inductors, and output capacitors) to be reduced.
GaN and other WBG devices also have better thermal conductivity and can withstand higher temperatures than silicon. Both help to reduce the need for thermal management components such as bulky heatsinks, frames, or fans. The absence of these devices (along with the shrinking of the powertrain components mentioned earlier) all lead to significant reductions in the overall size of the power supply.

GaN Desktop Power Adapters

Gallium Nitride Manufacturers

Improved efficiency, decreased size, and reduced weight have all been achieved, through the application of GaN, in CUI’s latest series of desktop adapters. For example, CUI’s SDI200G-U desktop adapter’s increased switching frequency has allowed its size to be reduced by more than half, increasing the power density from 5.3 W/in3 to 11.4 W/in3, which can be seen in Figure 3. This has also resulted in a weight reduction of 32% (820g to 560g). And by reducing conduction and switching losses, the adapters achieve efficiencies up to 95%. These GaN desktop adapters offer significant improvements to efficiency, size, and weight over conventional silicon-based supplies.
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Power supply manufacturers are always seeking ways to increase the efficiency and power density of their products. Many of the gains over the years have come from improvements to the silicon switches used inside the power supplies. But as silicon reaches its physical limits, manufacturers have had to look elsewhere for improvements. The use of GaN (with its lower losses and faster switching) allows manufacturers to push past the limitations of silicon and design smaller and more efficient power supplies while still leaving room to improve as GaN continues to develop. These improvements can be seen first-hand in CUI’s latest generation of GaN-based adapters.

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Gallium Nitride Fet

650 V, 50 mΩ Gallium Nitride (GaN) FET

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Download games on chromebook.

Orderable parts

Type number	Orderable part number	Ordering code (12NC)	Package	Buy from distributors
GAN063-650WSA	GAN063-650WSAQ	934660022127	SOT429	Order product

650 V, 50 mΩ Gallium Nitride (GaN) FET

Buy from distributors

Features and benefits

• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability (800 V)

Applications

• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives

Parametrics

Type number
GAN063-650WSA	SOT429	TO-247	Production	N	1	650	60	175	34.5	4	15	143	125	3.9	N	1000	130	2019-11-17

Package

Status	Package	Package information	Reflow-/Wave soldering
GAN063-650WSA	GAN063-650WSAQ (9346 600 22127)	Active	GAN063650WSA	TO-247 (SOT429)	SOT429	Horizontal, Rail Pack

Documentation (17)

File name	Title	Type	Date
GAN063-650WSA	650 V, 50 mOhm Gallium Nitride (GaN) FET	Data sheet	2020-07-31
AN90005	Understanding Power GaN FET data sheet parameters	Application note	2020-06-08
AN90004	Probing considerations for fast switching applications	Application note	2019-11-15
AN90006	Circuit design and PCB layout recommendations for GaN FET half bridges	Application note	2019-11-15
AN90021	Power GaN technology: the need for efficient powerconversion	Application note	2020-08-14
nexperia_brochure_gan	Nexperia GaN FETs brochure	Brochure	2021-03-29
nexperia_document_brochure_GaN_CHN	高功率氮化镓场效应 晶体管	Brochure	2021-03-29
GAN063-650WSA	GAN063-650WSA SPICE model	SPICE model	2019-02-18
TN00008	Power MOSFET frequently asked questions and answers	Technical note	2020-06-24
TN90004	An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability	Technical note	2020-07-21
GAN063-650WSA_RC_thermal_Model	GAN063-650WSA RC thermal Model	Thermal design	2019-02-18
GaN063-650WSA	GaN041-650WSA Foster thermal model	Thermal model	2021-04-02
GAN063-650WSA_Cauer	GAN063-650WSA Cauer thermal model	Thermal model	2021-04-07
nexperia_whitepaper_gan_robustness_aecq101	White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification	White paper	2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN	Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性)	White paper	2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversion	White paper: Power GaN technology: the need for efficient power conversion	White paper	2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN	白皮书: 功率GaN技术： 高效功率转换的需求	White paper	2020-08-17

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Models

File name	Title	Type	Date
GAN063-650WSA	GAN063-650WSA SPICE model	SPICE model	2019-02-18
GAN063-650WSA_RC_thermal_Model	GAN063-650WSA RC thermal Model	Thermal design	2019-02-18
GaN063-650WSA	GaN041-650WSA Foster thermal model	Thermal model	2021-04-02
GAN063-650WSA_Cauer	GAN063-650WSA Cauer thermal model	Thermal model	2021-04-07

Ordering, pricing & availability

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GAN063-650WSA	GAN063-650WSAQ	934660022127	Horizontal, Rail Pack	Order product

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Gan Fets

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Gallium Nitride Fetal Alcohol Syndrome

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Gan Power Fet

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